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AO4437 - P-Channel MOSFET

General Description

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Key Features

  • VDS (V) = -12V ID = -11 A (VGS = -4.5V) RDS(ON) < 16mΩ (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -2.5V) RDS(ON) < 25mΩ (VGS = -1.8V) ESD Rating: 4KV HBM The AO4437 uses advanced trench technology to provide RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM.

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AO4437 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com excellent Features VDS (V) = -12V ID = -11 A (VGS = -4.5V) RDS(ON) < 16mΩ (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -2.5V) RDS(ON) < 25mΩ (VGS = -1.8V) ESD Rating: 4KV HBM The AO4437 uses advanced trench technology to provide RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4437 is Pb-free (meets ROHS & Sony 259 specifications). AO4437L is a Green Product ordering option. AO4437 and AO4437L are electrically identical.